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| www.irf.com 1 09/14/07 IRFS4228PBF irfsl4228pbf notes through are on page 10 description hexfet ? power mosfet mosfet ! " mosfet #$%&' ( ) * * ) mosfet +* * features advanced process technology key parameters optimized for pdp sustain, energy recovery and pass switch applications low e pulse rating to reduce power dissipation in pdp sustain, energy recovery and pass switch applications low q g for fast response high repetitive peak current capability for reliable operation short fall & rise times for fast switching 175c operating junction temperature for improved ruggedness repetitive avalanche capability for robustness and reliability gds gate drain source s d g d 2 pak IRFS4228PBF to-262 irfsl4228pbf s d g s d g d d absolute maximum ratings parameter units v gs gate-to-source voltage v i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current i rp @ t c = 100c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature for 10 seconds mounting torque, 6-32 or m3 screw n thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.45 c/w r ja junction-to-ambient ( pcb mount ) , d 2 pak ??? 40 max. 59 330 83 30 170 300 -40 to + 175 10lb in (1.1n m) 330 170 2.2 v ds min 150 v v ds (avalanche) typ. 180 v r ds(on) typ. @ 10v 12 m i rp max @ t c = 100c 170 a t j max 175 c key parameters * r jc (end of life) for d 2 pak and to-262 = 0.65c/w. this is the maximum measured value after 1000 temperature cycles from -55 to 150c and is accounted for by the physical wearout of the die attach medium. * 2 www.irf.com s d g electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 150 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 150 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 12 15 m ? v gs(th) gate threshold voltage 3.0 ??? 5.0 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -14 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 1.0 ma i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 g fs forward transconductance 170 ??? ??? s q g total gate charge ??? 71 107 nc q gd gate-to-drain charge ??? 21 ??? t d(on) turn-on delay time ??? 18 ??? t r rise time ??? 59 ??? ns t d(off) turn-off delay time ??? 24 ??? t f fall time ??? 33 ??? t st shoot through blocking time 100 ??? ??? ns e pulse energy per pulse j c iss input capacitance ??? 4530 ??? c oss output capacitance ??? 550 ??? pf c rss reverse transfer capacitance ??? 100 ??? c oss eff. effective output capacitance ??? 480 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package avalanche characteristics parameter units e as single pulse avalanche energy mj e ar repetitive avalanche energy mj v ds(avalanche) repetitive avalanche voltage v i as avalanche current a diode characteristics parameter min. typ. max. units i s @ t c = 25c continuous source current ??? ??? 83 (body diode) a i sm pulsed source current ??? ??? 330 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 76 110 ns q rr reverse recovery charge ??? 230 350 nc v dd = 75v, v gs = 10v i d = 50a r g = 2.5 ? see fig. 22 mosfet symbol v ds = 25v, i d = 50a v dd = 75v, i d = 50a, v gs = 10v conditions and center of die contact v dd = 120v, v gs = 15v, r g = 5.1 ? v ds = 120v, r g = 5.1 ?, t j = 25c l = 220nh, c= 0.3f, v gs = 15v v ds = 120v, r g = 5.1 ?, t j = 100c v ds = 25v v ds = v gs , i d = 250a v ds = 150v, v gs = 0v v gs = 0v, v ds = 0v to 120v v ds = 150v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 0v l = 220nh, c= 0.3f, v gs = 15v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 33a t j = 25c, i f = 50a, v dd = 50v di/dt = 100a/s t j = 25c, i s = 50a, v gs = 0v showing the integral reverse p-n junction diode. typ. max. ? = 1.0mhz ??? 120 33 50 ??? ??? 180 ??? ??? 58 ??? ??? 110 ??? www.irf.com 3 fig 6. typical e pulse vs. drain current fig 5. typical e pulse vs. drain-to-source voltage fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 60s pulse width tj = 25c 5.0v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 3 4 5 6 7 8 9 10 11 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 85 90 95 100 105 110 115 120 125 v ds, drain-to-source voltage (v) 20 30 40 50 60 70 80 90 100 110 120 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.3f 100c 25c 60 65 70 75 80 85 90 95 100 105 i d , peak drain current (a) 10 20 30 40 50 60 70 80 90 100 110 120 e n e r g y p e r p u l s e ( j ) l = 220nh c = variable 100c 25c 4 www.irf.com fig 11. maximum drain current vs. case temperature fig 12. maximum safe operating area fig 8. typical source-drain diode forward voltage fig 7. typical e pulse vs.temperature 20 40 60 80 100 120 140 160 temperature (c) 0 20 40 60 80 100 120 140 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.3f c = 0.2f c = 0.1f 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v fig 10. typical gate charge vs.gate-to-source voltage fig 9. typical capacitance vs.drain-to-source voltage 25 50 75 100 125 150 175 t j , junction temperature (c) 0 10 20 30 40 50 60 70 80 90 i d , d r a i n c u r r e n t ( a ) 0 1020304050607080 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v v ds = 75v v ds = 30v i d = 50a 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss www.irf.com 5 fig 17. maximum effective transient thermal impedance, junction-to-case fig 15. threshold voltage vs. temperature fig 14. maximum avalanche energy vs. temperature fig 13. on-resistance vs. gate voltage fig 16. typical repetitive peak current vs. case temperature 4 6 8 10 12 14 16 18 v gs, gate -to -source voltage (v) 0 10 20 30 40 50 60 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 125c t j = 25c 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 13a 20a bottom 50a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 25 50 75 100 125 150 175 case temperature (c) 0 50 100 150 200 250 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 1s duty cycle = 0.25 half sine wave square pulse 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.0852 0.000052 0.1882 0.000980 0.1769 0.008365 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 6 www.irf.com fig 19b. unclamped inductive waveforms fig 19a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 20a. gate charge test circuit fig 20b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 18. for hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? !"!! ? # $$ ? !"!!% " www.irf.com 7 fig 21a. t st and e pulse test circuit fig 21b. t st test waveforms fig 21c. e pulse test waveforms pulse a pulse b t st driver dut l c vcc rg rg b a ipulse fig 22a. switching time test circuit fig 22b. switching time waveforms &' 1 ( # 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f 8 www.irf.com ! note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ www.irf.com 9 to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) ! " ## note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ 10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2007 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.096mh, r g = 25 ? , i as = 50a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. half sine wave with duty cycle = 0.25, ton=1sec. when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ |
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